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STD12NF06T4
Power MOSFET, N Channel, 60 V, 12 A, 0.1 ohm, TO-252 (DPAK), Surface Mount
5,841 有存貨
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5841 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 1+ | NT$32.840 |
| 10+ | NT$26.950 |
| 100+ | NT$20.960 |
| 500+ | NT$17.760 |
| 1000+ | NT$13.620 |
| 5000+ | NT$12.970 |
價格Each (Supplied on Cut Tape)
最少: 1
多項: 1
NT$32.84
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商產品編號STD12NF06T4
訂購代碼2098158
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id12A
Drain Source On State Resistance0.1ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation30W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The STD12NF06T4 is a STripFET™ II N-channel Power MOSFET developed using STMicroelectronics unique Single Feature Size™ strip-based process. The device has extremely high packing density for low ON-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
- Exceptional dV/dt capability
- Low gate charge
- -55 to 175°C Operating junction temperature range
應用
Power Management, Industrial
技術規格
Channel Type
N Channel
Continuous Drain Current Id
12A
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Power Dissipation
30W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.1ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
STD12NF06T4 的替代選擇
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相關產品
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000408