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STD15N60M2-EP
Power MOSFET, N Channel, 600 V, 11 A, 0.34 ohm, TO-252 (DPAK), Surface Mount
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產品訊息
製造商產品編號STD15N60M2-EP
訂購代碼2889917RL
Product RangeMDmesh
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds600V
Continuous Drain Current Id11A
Drain Source On State Resistance0.34ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation110W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeMDmesh
Qualification-
SVHCNo SVHC (25-Jun-2025)
產品總覽
- 600V, 11A MDmesh™ M2 EP power MOSFET in a 3 pin DPAK package
- Extremely low gate charge
- Excellent output capacitance (COSS) profile
- Very low turn-off switching losses
- 100% avalanche tested
- Zener protected
- Suitable for switching applications
- Tailored for very high frequency converters (f <gt/> 150KHz)
- Exhibits low on-resistance, optimized switching characteristics
- Suitable for the most demanding very high frequency converters
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Channel Type
N Channel
Continuous Drain Current Id
11A
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Power Dissipation
110W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
600V
Drain Source On State Resistance
0.34ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
MDmesh
MSL
MSL 1 - Unlimited
STD15N60M2-EP 的替代選擇
找到 6 個產品
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.001512