列印頁面
STD18N55M5
Power MOSFET, N Channel, 550 V, 13 A, 0.18 ohm, TO-252 (DPAK), Surface Mount
2,475 有存貨
需要更多？
2475 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 1+ | NT$126.610 |
| 10+ | NT$82.550 |
| 100+ | NT$64.460 |
| 500+ | NT$53.940 |
| 1000+ | NT$53.020 |
價格Each
最少: 1
多項: 1
NT$126.61
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商產品編號STD18N55M5
訂購代碼2098164
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds550V
Continuous Drain Current Id13A
Drain Source On State Resistance0.18ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation90W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The STD18N55M5 is a MDmesh™ V N-channel Power MOSFET based on an innovative proprietary vertical process technology with PowerMESH™ horizontal layout structure. The device has extremely low ON-resistance, which is unmatched among silicon based power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.
- Higher VDSS rating
- High dV/dt capability
- Excellent switching performance
- Easy to drive
- 100% Avalanche tested
- -55 to 150°C Operating junction temperature range
應用
Power Management, Industrial
技術規格
Channel Type
N Channel
Continuous Drain Current Id
13A
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Power Dissipation
90W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
550V
Drain Source On State Resistance
0.18ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
相關產品
找到 2 個產品
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000467