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STD25NF10T4
Power MOSFET, N Channel, 100 V, 12.5 A, 0.033 ohm, TO-252 (DPAK), Surface Mount
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條帶式包裝 & 複捲式
| 數量 | 價格 |
|---|---|
| 1+ | NT$59.860 |
| 10+ | NT$38.150 |
| 100+ | NT$25.270 |
| 500+ | NT$20.730 |
| 1000+ | NT$17.340 |
| 5000+ | NT$17.000 |
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商產品編號STD25NF10T4
訂購代碼
複捲式1752025RL
條帶式包裝1752025
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id12.5A
Drain Source On State Resistance0.033ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation100W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The STD25NF10T4 is a STripFET™ II N-channel Power MOSFET specifically designed to minimize input capacitance and gate charge. It is suitable as primary switch in advanced high efficiency isolated DC-to-DC converters for telecom and computer applications. It is also intended for any application with low gate charge drive requirements.
應用
Power Management, Communications & Networking, Computers & Computer Peripherals, Industrial
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Channel Type
N Channel
Continuous Drain Current Id
12.5A
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Power Dissipation
100W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.033ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85423300
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000998