列印頁面
STD5NM50T4
Power MOSFET, N Channel, 500 V, 7.5 A, 0.8 ohm, TO-252 (DPAK), Surface Mount
不再生產
產品訊息
製造商產品編號STD5NM50T4
訂購代碼1291965
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds500V
Continuous Drain Current Id7.5A
Drain Source On State Resistance0.8ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation100W
Operating Temperature Max150°C
Product Range-
Qualification-
產品總覽
The STD5NM50T4 is a MDmesh™ N-channel Power MOSFET associates the multiple drain process with PowerMESH™ horizontal layout. The device has an outstanding low On-resistance, impressively high dV/dt and excellent avalanche characteristics. The strip technique yields overall dynamic performance. It is suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies.
- 0.7Ω RDS (ON)
- High dV/dt and avalanche capabilities
- 100% Avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance
- Tight process control and high manufacturing yields
應用
Power Management, Industrial
技術規格
Channel Type
N Channel
Continuous Drain Current Id
7.5A
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Power Dissipation
100W
Product Range
-
Drain Source Voltage Vds
500V
Drain Source On State Resistance
0.8ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
Operating Temperature Max
150°C
Qualification
-
技術文件 (1)
相關產品
找到 4 個產品
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：Y-Ex
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:待通知
下載產品合規憑證
產品合規憑證
重量 (公斤)：.00031