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STD65N55F3
Power MOSFET, N Channel, 55 V, 32 A, 6.5 ohm, TO-252 (DPAK), Surface Mount
795 有存貨
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| 數量 | 價格 |
|---|---|
| 100+ | NT$43.180 |
| 500+ | NT$41.790 |
| 1000+ | NT$40.400 |
價格Each (Supplied on Cut Tape)
最少: 100
多項: 1
NT$4,318.00
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商產品編號STD65N55F3
訂購代碼1752050RL
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds55V
Continuous Drain Current Id32A
Drain Source On State Resistance6.5ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation110W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
QualificationAEC-Q101
SVHCNo SVHC (25-Jun-2025)
產品總覽
The STD65N55F3 is a STripFET™ N-channel enhancement-mode Power MOSFET designed with latest refinement of unique Single Feature Size™ strip-based process. The process decreased the critical alignment steps, offering remarkable manufacturing reproducibility. The outcome is a transistor with extremely high packing density for low ON-resistance, rugged avalanche characteristics and low gate charge.
- Standard threshold drive
- 100% Avalanche tested
- -55 to 175°C Operating junction temperature range
應用
Automotive, Power Management, Industrial
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Channel Type
N Channel
Continuous Drain Current Id
32A
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Power Dissipation
110W
Operating Temperature Max
175°C
Qualification
AEC-Q101
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
55V
Drain Source On State Resistance
6.5ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
STD65N55F3 的替代選擇
找到 2 個產品
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.0002