列印頁面
STD96N3LLH6
Power MOSFET, N Channel, 30 V, 80 A, 4200 µohm, TO-252 (DPAK), Surface Mount
14,422 有存貨
需要更多？
14422 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 100+ | NT$18.060 |
| 500+ | NT$18.050 |
| 1000+ | NT$18.040 |
| 5000+ | NT$18.020 |
價格Each (Supplied on Cut Tape)
最少: 100
多項: 1
NT$1,806.00
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商產品編號STD96N3LLH6
訂購代碼3367029RL
Product RangeSTripFET VI DeepGATE
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id80A
Drain Source On State Resistance4200µohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.5V
Power Dissipation70W
No. of Pins3Pins
Operating Temperature Max175°C
Product RangeSTripFET VI DeepGATE
Qualification-
SVHCNo SVHC (25-Jun-2025)
產品總覽
STD96N3LLH6 is a N-channel power MOSFET that utilizes the 6th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure. Applications include switching applications, automotive.
- Extremely low on-resistance RDS(on), high avalanche ruggedness
- Low gate drive power losses
- 30V minimum drain-source breakdown voltage (ID = 250µA, VGS= 0, TCASE = 25°C)
- 0.0042ohm maximum static drain-source on resistance (VGS = 10V, ID = 40A, TCASE = 25°C)
- 80A drain current (continuous) at TC = 25°C
- 1 to 2.5V gate threshold voltage range (VDS = VGS, ID = 250µA, TCASE = 25°C)
- 2200pF typical input capacitance (VDS = 25V, f=1MHz, VGS = 0, TCASE = 25°C)
- 400pF typical output capacitance (VDS = 25V, f=1MHz, VGS = 0, TCASE = 25°C)
- 280pF typical reverse transfer capacitance (VDS = 25V, f=1MHz, VGS = 0, TCASE = 25°C)
- DPAK package
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Channel Type
N Channel
Continuous Drain Current Id
80A
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Power Dissipation
70W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
30V
Drain Source On State Resistance
4200µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.5V
No. of Pins
3Pins
Product Range
STripFET VI DeepGATE
MSL
MSL 1 - Unlimited
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.00033