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STFW4N150
Power MOSFET, N Channel, 1.5 kV, 4 A, 5 ohm, TO-3PF, Through Hole
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356 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 1+ | NT$212.820 |
| 10+ | NT$189.760 |
| 100+ | NT$166.690 |
| 500+ | NT$143.630 |
| 1000+ | NT$120.560 |
價格Each
最少: 1
多項: 1
NT$212.82
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商產品編號STFW4N150
訂購代碼2098245
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds1.5kV
Continuous Drain Current Id4A
Drain Source On State Resistance5ohm
Transistor Case StyleTO-3PF
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation63W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The STFW4N150 is a 1500V N-channel Power MOSFET developed using the well consolidated high voltage MESH OVERLAY™ process. The strengthened layout coupled with the proprietary edge termination structure gives the lowest RDS (on) per area, unrivalled gate charge and switching characteristics. Improved gate charge and lower power dissipation to meet today's challenging efficiency requirements.
- 100% Avalanche tested
- Intrinsic capacitances and Qg minimized
- High speed switching
- High peak power
- High ruggedness capability
應用
Industrial
技術規格
Channel Type
N Channel
Continuous Drain Current Id
4A
Transistor Case Style
TO-3PF
Rds(on) Test Voltage
10V
Power Dissipation
63W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
1.5kV
Drain Source On State Resistance
5ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
MSL
-
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：South Korea
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：South Korea
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
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產品合規憑證
重量 (公斤)：.008165