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3000 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 3000+ | NT$54.200 |
| 9000+ | NT$30.270 |
價格Each (Supplied on Full Reel)
最少: 3000
多項: 3000
NT$162,600.00
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商產品編號STL20N6F7
訂購代碼4320035
Product RangeSTripFET F7 Series
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id100A
Drain Source On State Resistance4600µohm
Transistor Case StylePowerFLAT
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation78W
No. of Pins8Pins
Operating Temperature Max150°C
Product RangeSTripFET F7 Series
Qualification-
SVHCNo SVHC (25-Jun-2025)
產品總覽
STL20N6F7 is a N-channel STripFET™ F7 Power MOSFET in a PowerFLAT™ 3.3x3.3 package. This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Suitable for switching applications.
- Among the lowest RDS(on) on the market
- Excellent figure of merit (FoM)
- Low Crss/Ciss ratio for EMI immunity
- High avalanche ruggedness
- 60V drain-source breakdown voltage
- 0.0054ohm static drain-source on-resistance max
- 20A drain current (continuous) at Tpcb = 25 °C
- Operating junction temperature range from -55 to 150°C
- 3W total dissipation at Tpcb = 25°C
技術規格
Channel Type
N Channel
Continuous Drain Current Id
100A
Transistor Case Style
PowerFLAT
Rds(on) Test Voltage
10V
Power Dissipation
78W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
60V
Drain Source On State Resistance
4600µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
No. of Pins
8Pins
Product Range
STripFET F7 Series
SVHC
No SVHC (25-Jun-2025)
法規與環境保護
原產地:
承擔產品生產最後程序之國家原產地:China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地:China
承擔產品生產最後程序之國家
關稅編號:85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定:是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤):.000075