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STN1NK60Z
Power MOSFET, N Channel, 600 V, 300 mA, 15 ohm, SOT-223, Surface Mount
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1472 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 5+ | NT$12.930 |
| 50+ | NT$10.700 |
| 250+ | NT$10.150 |
| 1000+ | NT$9.600 |
| 2000+ | NT$9.050 |
價格Each (Supplied on Cut Tape)
最少: 5
多項: 5
NT$64.65
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商產品編號STN1NK60Z
訂購代碼1653678
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds600V
Continuous Drain Current Id300mA
Drain Source On State Resistance15ohm
Transistor Case StyleSOT-223
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3.75V
Power Dissipation2W
No. of Pins4Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
產品總覽
- 600V, 0.3A N-channel zener protected SuperMESH™ power MOSFET in 4 pin SOT-223 package
- 100% avalanche tested
- Extremely high dv/dt capability
- Gate charge minimized
- ESD improved capability
- Suitable for switching applications
- Achieved through optimization of ST's well established strip-based PowerMESH™ layout
- Significant reduction in on-resistance
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Channel Type
N Channel
Continuous Drain Current Id
300mA
Transistor Case Style
SOT-223
Rds(on) Test Voltage
10V
Power Dissipation
2W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
600V
Drain Source On State Resistance
15ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3.75V
No. of Pins
4Pins
Product Range
-
MSL
MSL 1 - Unlimited
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.00023