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產品訊息
製造商產品編號STN1NK60Z
訂購代碼1653678
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds600V
Continuous Drain Current Id300mA
Drain Source On State Resistance15ohm
Transistor Case StyleSOT-223
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3.75V
Power Dissipation2W
No. of Pins4Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
產品總覽
- 600V, 0.3A N-channel zener protected SuperMESH™ power MOSFET in 4 pin SOT-223 package
- 100% avalanche tested
- Extremely high dv/dt capability
- Gate charge minimized
- ESD improved capability
- Suitable for switching applications
- Achieved through optimization of ST's well established strip-based PowerMESH™ layout
- Significant reduction in on-resistance
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Channel Type
N Channel
Continuous Drain Current Id
300mA
Transistor Case Style
SOT-223
Rds(on) Test Voltage
10V
Power Dissipation
2W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
600V
Drain Source On State Resistance
15ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3.75V
No. of Pins
4Pins
Product Range
-
MSL
MSL 1 - Unlimited
法規與環境保護
原產地:
承擔產品生產最後程序之國家原產地:China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地:China
承擔產品生產最後程序之國家
關稅編號:85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定:是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤):.00023