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STP13N95K3
Power MOSFET, N Channel, 950 V, 10 A, 0.68 ohm, TO-220, Through Hole
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78 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 1+ | NT$229.880 |
| 10+ | NT$125.300 |
| 100+ | NT$117.080 |
| 500+ | NT$116.920 |
| 1000+ | NT$116.760 |
價格Each
最少: 1
多項: 1
NT$229.88
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商產品編號STP13N95K3
訂購代碼2098292
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds950V
Continuous Drain Current Id10A
Drain Source On State Resistance0.68ohm
Transistor Case StyleTO-220
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation190W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The STP13N95K3 is a SuperMESH3™ N-channel Power MOSFET offers Zener-protection and minimized gate charge. This SuperMESH3™ Power MOSFET is the result of improvements applied to STMicroelectronics' SuperMESH™ technology, combined with a new optimized vertical structure. This device boasts an extremely low ON-resistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications.
- Extremely large avalanche performance
- Very low intrinsic capacitance
應用
Industrial, Power Management
技術規格
Channel Type
N Channel
Continuous Drain Current Id
10A
Transistor Case Style
TO-220
Rds(on) Test Voltage
10V
Power Dissipation
190W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
950V
Drain Source On State Resistance
0.68ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
MSL
-
相關產品
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
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重量 (公斤)：.19