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STP16NK60Z
MOSFET, N, TO-220
无库存
產品訊息
製造商產品編號STP16NK60Z
訂購代碼9512705
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds600V
Continuous Drain Current Id14A
Drain Source On State Resistance0.38ohm
Transistor Case StyleTO-220
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3.75V
Power Dissipation190W
Operating Temperature Max150°C
Product Range-
STP16NK60Z 的替代選擇
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產品總覽
The STP16NK60Z is a SuperMESH™ N-channel Power MOSFET offers Zener-protection and minimized gate charge. The new SuperMESH™ Power MOSFETS is the result of further design improvements on ST's well-established strip based PowerMESH™ layout. In addition to significantly lower ON-resistance, the device offers superior dV/dt capability to ensure optimal performance even in the most demanding applications. The SuperMESH™ device further complements an already broad range of innovative high voltage MOSFETs, which includes the revolutionary MDmesh™ products.
- 100% Avalanche tested
- Very low intrinsic capacitance
應用
Industrial, Power Management
技術規格
Channel Type
N Channel
Continuous Drain Current Id
14A
Transistor Case Style
TO-220
Rds(on) Test Voltage
10V
Power Dissipation
190W
Product Range
-
Drain Source Voltage Vds
600V
Drain Source On State Resistance
0.38ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
3.75V
Operating Temperature Max
150°C
相關產品
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Italy
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Italy
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:待通知
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產品合規憑證
重量 (公斤)：.002