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STP20NF20
Power MOSFET, N Channel, 200 V, 18 A, 0.125 ohm, TO-220, Through Hole
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915 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 1+ | NT$73.910 |
| 10+ | NT$38.920 |
| 100+ | NT$35.980 |
| 500+ | NT$30.000 |
| 1000+ | NT$27.290 |
| 5000+ | NT$24.580 |
價格Each
最少: 1
多項: 1
NT$73.91
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商產品編號STP20NF20
訂購代碼1456351
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds200V
Continuous Drain Current Id18A
Drain Source On State Resistance0.125ohm
Transistor Case StyleTO-220
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation90W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The STP20NF20 is a STripFET™ N-channel Power MOSFET designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-to-DC converters.
- Exceptional dV/dt capability
- Low gate charge
- 100% Avalanche tested
- -55 to 175°C Operating junction temperature
應用
Power Management, Industrial
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Channel Type
N Channel
Continuous Drain Current Id
18A
Transistor Case Style
TO-220
Rds(on) Test Voltage
10V
Power Dissipation
90W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
200V
Drain Source On State Resistance
0.125ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Product Range
-
MSL
-
相關產品
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
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產品合規憑證
重量 (公斤)：.006804