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STP2NK90Z
Power MOSFET, N Channel, 900 V, 2.1 A, 6.5 ohm, TO-220, Through Hole
738 有存貨
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738 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 1+ | NT$86.000 |
| 10+ | NT$43.330 |
| 100+ | NT$39.070 |
| 500+ | NT$33.820 |
| 1000+ | NT$26.830 |
| 5000+ | NT$25.710 |
價格Each
最少: 1
多項: 1
NT$86.00
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商產品編號STP2NK90Z
訂購代碼9512780
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds900V
Continuous Drain Current Id2.1A
Drain Source On State Resistance6.5ohm
Transistor Case StyleTO-220
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3.75V
Power Dissipation70W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The STP2NK90Z is a SuperMESH™ N-channel Power MOSFET offers Zener-protection and minimized gate charge. The SuperMESH™ is obtained through an extreme optimization of ST's well established strip based PowerMESH™ layout. In addition to pushing ON-resistance significantly down, special care is taken to ensure a very good dV/dt capability for the most demanding applications. This MOSFET complements ST full range of high voltage Power MOSFETs including revolutionary MDmesh™ products.
- Extremely high dV/dt capability
- Improved ESD capability
- Very good manufacturing repeatability
應用
Industrial, Power Management
技術規格
Channel Type
N Channel
Continuous Drain Current Id
2.1A
Transistor Case Style
TO-220
Rds(on) Test Voltage
10V
Power Dissipation
70W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
900V
Drain Source On State Resistance
6.5ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
3.75V
No. of Pins
3Pins
Product Range
-
MSL
-
相關產品
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
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產品合規憑證
重量 (公斤)：.002