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STP45N65M5
Power MOSFET, N Channel, 650 V, 35 A, 0.078 ohm, TO-220, Through Hole
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| 數量 | 價格 |
|---|---|
| 1+ | NT$254.320 |
| 5+ | NT$235.020 |
| 10+ | NT$215.720 |
| 50+ | NT$196.420 |
| 100+ | NT$177.120 |
| 250+ | NT$157.820 |
價格Each
最少: 1
多項: 1
NT$254.32
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商產品編號STP45N65M5
訂購代碼2344100
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds650V
Continuous Drain Current Id35A
Drain Source On State Resistance0.078ohm
Transistor Case StyleTO-220
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation210W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The STP45N65M5 is a 650V N-channel MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with well-known PowerMESH™ horizontal layout structure. The MOSFET has extremely low on resistance, which is unmatched among silicon based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency. Improved gate charge and lower power dissipation to meet today's challenging efficiency requirements.
- Worldwide best RDS (on)
- Higher VDSS rating and high dv/dt capability
- Excellent switching performance
- 100% Avalanche tested
應用
Industrial
技術規格
Channel Type
N Channel
Continuous Drain Current Id
35A
Transistor Case Style
TO-220
Rds(on) Test Voltage
10V
Power Dissipation
210W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
650V
Drain Source On State Resistance
0.078ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
MSL
-
相關產品
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
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產品合規憑證
重量 (公斤)：.002734