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STP80N10F7
Power MOSFET, N Channel, 100 V, 80 A, 8500 µohm, TO-220AB, Through Hole
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| 數量 | 價格 |
|---|---|
| 1+ | NT$60.690 |
| 10+ | NT$42.340 |
| 100+ | NT$41.380 |
| 500+ | NT$40.420 |
| 1000+ | NT$39.460 |
價格Each
最少: 1
多項: 1
NT$60.69
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商產品編號STP80N10F7
訂購代碼2807222
Product RangeDeepGATE STripFET VII
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id80A
Drain Source On State Resistance8500µohm
Transistor Case StyleTO-220AB
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3.5V
Power Dissipation110W
No. of Pins3Pins
Operating Temperature Max175°C
Product RangeDeepGATE STripFET VII
Qualification-
SVHCNo SVHC (17-Dec-2015)
STP80N10F7 的替代選擇
找到 2 個產品
產品總覽
應用
Medical
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Channel Type
N Channel
Continuous Drain Current Id
80A
Transistor Case Style
TO-220AB
Rds(on) Test Voltage
10V
Power Dissipation
110W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (17-Dec-2015)
Drain Source Voltage Vds
100V
Drain Source On State Resistance
8500µohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
3.5V
No. of Pins
3Pins
Product Range
DeepGATE STripFET VII
MSL
MSL 1 - Unlimited
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (17-Dec-2015)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.0023