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STP80NF55-06
Power MOSFET, N Channel, 55 V, 80 A, 6500 µohm, TO-220, Through Hole
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| 數量 | 價格 |
|---|---|
| 1+ | NT$91.250 |
| 10+ | NT$45.310 |
| 100+ | NT$40.710 |
| 500+ | NT$35.460 |
| 1000+ | NT$33.270 |
價格Each
最少: 1
多項: 1
NT$91.25
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商產品編號STP80NF55-06
訂購代碼1291987
Product RangeSTP
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds55V
Continuous Drain Current Id80A
Drain Source On State Resistance6500µohm
Transistor Case StyleTO-220
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation300W
No. of Pins3Pins
Operating Temperature Max175°C
Product RangeSTP
Qualification-
SVHCLead (21-Jan-2025)
產品總覽
The STP80NF55-06 is a 55V N-channel STripFET™ II Power MOSFET developed using unique "single feature size"™ strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. Improved gate charge and lower power dissipation to meet today's challenging efficiency requirements.
- Exceptional dv/dt capability
- 100% Avalanche tested
- Application oriented characterization
應用
Industrial
技術規格
Channel Type
N Channel
Continuous Drain Current Id
80A
Transistor Case Style
TO-220
Rds(on) Test Voltage
10V
Power Dissipation
300W
Operating Temperature Max
175°C
Qualification
-
SVHC
Lead (21-Jan-2025)
Drain Source Voltage Vds
55V
Drain Source On State Resistance
6500µohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Product Range
STP
MSL
MSL 2 - 1 year
相關產品
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：Y-Ex
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:Lead (21-Jan-2025)
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產品合規憑證
重量 (公斤)：.002843