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STPSC10H065G-TR
Silicon Carbide Schottky Diode, 650V Series, Single, 650 V, 10 A, 28.5 nC, TO-263
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產品訊息
製造商產品編號STPSC10H065G-TR
訂購代碼2376463RL
Product Range650V
技術資料表
Product Range650V
Diode ConfigurationSingle
Repetitive Peak Reverse Voltage650V
Average Forward Current10A
Total Capacitive Charge28.5nC
Diode Case StyleTO-263 (D2PAK)
No. of Pins3 Pin
Operating Temperature Max175°C
Diode MountingSurface Mount
Qualification-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The STPSC10H065G-TR is a Power Schottky Silicon Carbide Diode features ultra high performance. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650V rating. Due to the Schottky construction no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behaviour is independent of temperature. It is especially suited for use in PFC applications and this ST SiC diode will boost the performance in hard switching conditions. Its high forward surge capability ensures a good robustness during transient phases.
- No or negligible reverse recovery
- Switching behaviour independent of temperature
- High forward surge capability
應用
Industrial
技術規格
Product Range
650V
Repetitive Peak Reverse Voltage
650V
Total Capacitive Charge
28.5nC
No. of Pins
3 Pin
Diode Mounting
Surface Mount
SVHC
No SVHC (25-Jun-2025)
Diode Configuration
Single
Average Forward Current
10A
Diode Case Style
TO-263 (D2PAK)
Operating Temperature Max
175°C
Qualification
-
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85411000
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.001724