列印頁面
STPSC4H065B-TR
Silicon Carbide Schottky Diode, 650V Series, Single, 650 V, 4 A, 12.5 nC, TO-252
圖片僅供舉例說明。 請參閱產品描述。
產品訊息
製造商產品編號STPSC4H065B-TR
訂購代碼2376457RL
Product Range650V
技術資料表
Product Range650V
Diode ConfigurationSingle
Repetitive Peak Reverse Voltage650V
Average Forward Current4A
Total Capacitive Charge12.5nC
Diode Case StyleTO-252 (DPAK)
No. of Pins3 Pin
Operating Temperature Max175°C
Diode MountingSurface Mount
Qualification-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The Schottky Silicon-Carbide Diodes from STMicroelectronics take advantage of SiC's impressive performance over standard Silicon. Offering double or triple the bandgap in comparison to silicon means that SIC devices can tolerate much higher voltages and electric fields. The low reverse recovery characteristics increase efficiency in all systems thanks to their low forward voltage and make ST's silicon-carbide diodes a key contributor to energy savings. These savings are found in SMPS applications as well as solar energy conversion, EV or HEV charging stations, and many more. The product ranges from 600V to 1200Vin through hole and SMD packages.
技術規格
Product Range
650V
Repetitive Peak Reverse Voltage
650V
Total Capacitive Charge
12.5nC
No. of Pins
3 Pin
Diode Mounting
Surface Mount
SVHC
No SVHC (25-Jun-2025)
Diode Configuration
Single
Average Forward Current
4A
Diode Case Style
TO-252 (DPAK)
Operating Temperature Max
175°C
Qualification
-
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85411000
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.0138