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STS4DNF60L
Dual MOSFET, N Channel, 60 V, 4 A, 0.045 ohm
可供訂購
製造商標準交貨時間：19 週
有貨時通知我
| 數量 | 價格 |
|---|---|
| 2500+ | NT$26.360 |
| 7500+ | NT$25.840 |
價格Each (Supplied on Full Reel)
最少: 2500
多項: 2500
NT$65,900.00
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商產品編號STS4DNF60L
訂購代碼2409151
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds N Channel60V
Drain Source Voltage Vds P Channel-
Continuous Drain Current Id N Channel4A
Continuous Drain Current Id P Channel-
Drain Source On State Resistance N Channel0.045ohm
Drain Source On State Resistance P Channel-
Transistor Case StyleSOIC
No. of Pins8Pins
Power Dissipation N Channel2.5W
Power Dissipation P Channel-
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The STS4DNF60L is a N-channel STripFET™ Power MOSFET for switching applications. This Power MOSFET is the latest development of STMicroelectronics unique "single feature size" strip-based process. The resulting transistor shows extremely high packing density for low ON-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
- Standard outline for easy automated surface-mount assembly
- Low threshold gate drive
應用
Industrial, Power Management
技術規格
Channel Type
N Channel
Drain Source Voltage Vds P Channel
-
Continuous Drain Current Id P Channel
-
Drain Source On State Resistance P Channel
-
No. of Pins
8Pins
Power Dissipation P Channel
-
Product Range
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
60V
Continuous Drain Current Id N Channel
4A
Drain Source On State Resistance N Channel
0.045ohm
Transistor Case Style
SOIC
Power Dissipation N Channel
2.5W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
STS4DNF60L 的替代選擇
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
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產品合規憑證
重量 (公斤)：.000226