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STS4DNF60L
Dual MOSFET, N Channel, 60 V, 4 A, 0.045 ohm
產品訊息
製造商產品編號STS4DNF60L
訂購代碼9935738RL
技術資料表
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds N Channel60V
Drain Source Voltage Vds60V
Drain Source Voltage Vds P Channel-
Continuous Drain Current Id4A
On Resistance Rds(on)0.045ohm
Continuous Drain Current Id N Channel4A
Continuous Drain Current Id P Channel-
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel0.045ohm
Drain Source On State Resistance P Channel-
Rds(on) Test Voltage10V
Transistor Case StyleSOIC
Gate Source Threshold Voltage Max1.7V
Power Dissipation Pd2.5W
No. of Pins8Pins
Power Dissipation N Channel2.5W
Power Dissipation P Channel-
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The STS4DNF60L is a N-channel STripFET™ Power MOSFET for switching applications. This Power MOSFET is the latest development of STMicroelectronics unique "single feature size" strip-based process. The resulting transistor shows extremely high packing density for low ON-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
- Standard outline for easy automated surface-mount assembly
- Low threshold gate drive
應用
Industrial, Power Management
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Channel Type
N Channel
Drain Source Voltage Vds N Channel
60V
Drain Source Voltage Vds P Channel
-
On Resistance Rds(on)
0.045ohm
Continuous Drain Current Id P Channel
-
Drain Source On State Resistance N Channel
0.045ohm
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
1.7V
No. of Pins
8Pins
Power Dissipation P Channel
-
Product Range
-
Automotive Qualification Standard
-
SVHC
No SVHC (25-Jun-2025)
Transistor Polarity
N Channel
Drain Source Voltage Vds
60V
Continuous Drain Current Id
4A
Continuous Drain Current Id N Channel
4A
Transistor Mounting
Surface Mount
Drain Source On State Resistance P Channel
-
Transistor Case Style
SOIC
Power Dissipation Pd
2.5W
Power Dissipation N Channel
2.5W
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
相關產品
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
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產品合規憑證
重量 (公斤)：.000149