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STS8DN3LLH5
Dual MOSFET, N Channel, 30 V, 30 V, 10 A, 10 A, 0.019 ohm
產品訊息
製造商產品編號STS8DN3LLH5
訂購代碼3367091RL
Product RangeSTripFET V Series
技術資料表
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds30V
Drain Source Voltage Vds N Channel30V
Drain Source Voltage Vds P Channel30V
Continuous Drain Current Id10A
On Resistance Rds(on)0.0155ohm
Continuous Drain Current Id N Channel10A
Continuous Drain Current Id P Channel10A
Drain Source On State Resistance N Channel0.019ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Drain Source On State Resistance P Channel-
Transistor Case StyleSOIC
Gate Source Threshold Voltage Max1V
No. of Pins8Pins
Power Dissipation Pd2.7W
Power Dissipation N Channel2.7W
Power Dissipation P Channel2.7W
Operating Temperature Max150°C
Product RangeSTripFET V Series
Qualification-
Automotive Qualification Standard-
SVHCNo SVHC (25-Jun-2025)
技術規格
Transistor Polarity
N Channel
Drain Source Voltage Vds
30V
Drain Source Voltage Vds P Channel
30V
On Resistance Rds(on)
0.0155ohm
Continuous Drain Current Id P Channel
10A
Transistor Mounting
Surface Mount
Drain Source On State Resistance P Channel
-
Gate Source Threshold Voltage Max
1V
Power Dissipation Pd
2.7W
Power Dissipation P Channel
2.7W
Product Range
STripFET V Series
Automotive Qualification Standard
-
SVHC
No SVHC (25-Jun-2025)
Channel Type
N Channel
Drain Source Voltage Vds N Channel
30V
Continuous Drain Current Id
10A
Continuous Drain Current Id N Channel
10A
Drain Source On State Resistance N Channel
0.019ohm
Rds(on) Test Voltage
10V
Transistor Case Style
SOIC
No. of Pins
8Pins
Power Dissipation N Channel
2.7W
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000454