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STW69N65M5
Power MOSFET, N Channel, 650 V, 58 A, 0.037 ohm, TO-247, Through Hole
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| 數量 | 價格 |
|---|---|
| 1+ | NT$289.770 |
| 10+ | NT$278.960 |
| 25+ | NT$276.400 |
價格Each
最少: 1
多項: 1
NT$289.77
品項附註
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產品訊息
製造商產品編號STW69N65M5
訂購代碼2341734
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds650V
Continuous Drain Current Id58A
Drain Source On State Resistance0.037ohm
Transistor Case StyleTO-247
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation330W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The STW69N65M5 is a MDmesh™ N-channel Power MOSFET offers excellent switching performance. This MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics' well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low ON-resistance, which is unmatched among silicon based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.
- Worldwide best RDS (ON) area
- Higher VDSS rating and high dV/dt capability
- 100% Avalanche tested
應用
Industrial, Power Management
技術規格
Channel Type
N Channel
Continuous Drain Current Id
58A
Transistor Case Style
TO-247
Rds(on) Test Voltage
10V
Power Dissipation
330W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
650V
Drain Source On State Resistance
0.037ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
MSL
-
STW69N65M5 的替代選擇
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.003175