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STY112N65M5
Power MOSFET, N Channel, 650 V, 96 A, 0.019 ohm, MAX-247, Through Hole
可供訂購
製造商標準交貨時間：19 週
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| 數量 | 價格 |
|---|---|
| 1+ | NT$1,168.630 |
| 5+ | NT$1,111.300 |
| 10+ | NT$1,048.250 |
| 50+ | NT$1,006.750 |
| 100+ | NT$963.530 |
價格Each
最少: 1
多項: 1
NT$1,168.63
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商產品編號STY112N65M5
訂購代碼2098403
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds650V
Continuous Drain Current Id96A
Drain Source On State Resistance0.019ohm
Transistor Case StyleMAX-247
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation625W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The STY112N65M5 is a MDmesh™ V N-channel Power MOSFET offers excellent switching performance. This MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics' well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low ON-resistance, which is unmatched among silicon based Power MOSFET, making it especially suitable for applications which require superior power density and outstanding efficiency.
- Higher VDSS rating
- Higher dV/dt capability
- Easy to drive
- 100% Avalanche tested
應用
Industrial, Power Management
技術規格
Channel Type
N Channel
Continuous Drain Current Id
96A
Transistor Case Style
MAX-247
Rds(on) Test Voltage
10V
Power Dissipation
625W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
650V
Drain Source On State Resistance
0.019ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
MSL
-
相關產品
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
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產品合規憑證
重量 (公斤)：.007632