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VNN1NV04PTR-E
Power MOSFET, N Channel, 45 V, 1.7 A, 0.25 ohm, SOT-223, Surface Mount
3,000 有存貨
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3000 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 1000+ | NT$18.870 |
| 3000+ | NT$16.980 |
價格Each (Supplied on Full Reel)
最少: 1000
多項: 1000
NT$18,870.00
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商產品編號VNN1NV04PTR-E
訂購代碼2354522
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds45V
Continuous Drain Current Id1.7A
Drain Source On State Resistance0.25ohm
Transistor Case StyleSOT-223
Transistor MountingSurface Mount
Rds(on) Test Voltage5V
Gate Source Threshold Voltage Max500mV
Power Dissipation7W
No. of Pins4Pins
Operating Temperature Max-
Product Range-
Qualification-
MSL-
SVHCLead (21-Jan-2025)
產品總覽
The VNN1NV04PTR-E is a 45V Fully Auto Protected Power MOSFET designed in VIPower M0 technology intended for replacement of standard power MOSFETS in DC to 50KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments. Fault feedback can be detected by monitoring the voltage at the input pin.
- Linear current limitation
- Thermal shutdown
- Short-circuit protection
- Integrated clamp
- Low current drawn from input pin
- Diagnostic feedback through input pin
- ESD protection
- Direct access to the gate of the power MOSFET (analogue driving)
- Compatible with standard power MOSFET
應用
Industrial
技術規格
Channel Type
N Channel
Continuous Drain Current Id
1.7A
Transistor Case Style
SOT-223
Rds(on) Test Voltage
5V
Power Dissipation
7W
Operating Temperature Max
-
Qualification
-
SVHC
Lead (21-Jan-2025)
Drain Source Voltage Vds
45V
Drain Source On State Resistance
0.25ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
500mV
No. of Pins
4Pins
Product Range
-
MSL
-
VNN1NV04PTR-E 的替代選擇
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Malaysia
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Malaysia
承擔產品生產最後程序之國家
關稅編號：85423300
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：Y-Ex
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:Lead (21-Jan-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000348