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VNP10N07-E
Power MOSFET, N Channel, 70 V, 10 A, 0.1 ohm, TO-220, Through Hole
2,627 有存貨
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2627 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 1+ | NT$95.900 |
| 10+ | NT$46.830 |
| 100+ | NT$43.300 |
| 500+ | NT$40.190 |
| 1000+ | NT$37.070 |
價格Each
最少: 1
多項: 1
NT$95.90
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商產品編號VNP10N07-E
訂購代碼1739423
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds70V
Continuous Drain Current Id10A
Drain Source On State Resistance0.1ohm
Transistor Case StyleTO-220
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation50W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The VNP10N07-E is a monolithic device fully auto protected Power MOSFET with ESD protection. The VNP10N07 is a monolithic device made using STMicroelectronics VIPower technology, intended for replacement of standard power MOSFETS in DC to 50kHz applications. Built-in thermal shut-down, linear current limitation and overvoltage clamp protect the chip in harsh environments. Fault feedback can be detected by monitoring the voltage at the input pin.
- Thermal shutdown
- Integrated clamp
- Diagnostic feedback through input pin
- Low current drawn from input pin
應用
Industrial, Motor Drive & Control
技術規格
Channel Type
N Channel
Continuous Drain Current Id
10A
Transistor Case Style
TO-220
Rds(on) Test Voltage
10V
Power Dissipation
50W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
70V
Drain Source On State Resistance
0.1ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Product Range
-
MSL
-
相關產品
找到 2 個產品
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85423990
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.00195