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CSD16301Q2
Power MOSFET, N Channel, 25 V, 5 A, 0.024 ohm, SON, Surface Mount
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215 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 100+ | NT$9.580 |
| 500+ | NT$7.320 |
| 1000+ | NT$5.520 |
| 5000+ | NT$4.550 |
價格Each (Supplied on Cut Tape)
最少: 100
多項: 5
NT$958.00
品項附註
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產品訊息
製造商產品編號CSD16301Q2
訂購代碼3125012RL
Channel TypeN Channel
Drain Source Voltage Vds25V
Continuous Drain Current Id5A
Drain Source On State Resistance0.024ohm
Transistor Case StyleSON
Transistor MountingSurface Mount
Rds(on) Test Voltage8V
Gate Source Threshold Voltage Max1.2V
Power Dissipation2.3W
No. of Pins6Pins
Operating Temperature Max150°C
Product Range-
Qualification-
產品總覽
The CSD16301Q2 is a NexFET™ N-channel Power MOSFET designed to minimize losses in power conversion and load management applications.
- Ultra-low Qg and Qgd
- Low thermal resistance
- Halogen-free
- Plastic package
- -55 to 150°C Operating junction temperature range
應用
Power Management, Industrial
技術規格
Channel Type
N Channel
Continuous Drain Current Id
5A
Transistor Case Style
SON
Rds(on) Test Voltage
8V
Power Dissipation
2.3W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
25V
Drain Source On State Resistance
0.024ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.2V
No. of Pins
6Pins
Product Range
-
技術文件 (1)
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Malaysia
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Malaysia
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000112