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產品訊息
製造商產品編號CSD16322Q5复制
訂購代碼3009641
Channel TypeN Channel
Drain Source Voltage Vds25V
Continuous Drain Current Id97A
Drain Source On State Resistance3900µohm
Transistor Case StyleSON
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max1.1V
Power Dissipation3.1W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (27-Jun-2018)
產品總覽
The CSD16322Q5 is a NexFET™ N-channel Power MOSFET designed to minimize losses in power conversion applications and optimized for 5V gate drive applications.
- Ultra-low Qg and Qgd
- Low thermal resistance
- Avalanche rated
- Halogen-free
- Plastic package
- -55 to 150°C Operating junction temperature range
應用
Power Management, Communications & Networking, Computers & Computer Peripherals, Industrial
技術規格
Channel Type
N Channel
Continuous Drain Current Id
97A
Transistor Case Style
SON
Rds(on) Test Voltage
4.5V
Power Dissipation
3.1W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (27-Jun-2018)
Drain Source Voltage Vds
25V
Drain Source On State Resistance
3900µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.1V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
法規與環境保護
原產地:
承擔產品生產最後程序之國家原產地:Philippines
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地:Philippines
承擔產品生產最後程序之國家
關稅編號:85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定:是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (27-Jun-2018)
下載產品合規憑證
產品合規憑證
重量 (公斤):.000289

