列印頁面
CSD18509Q5BT
Power MOSFET, N Channel, 40 V, 100 A, 1000 µohm, VSON, Surface Mount
无库存
產品訊息
製造商產品編號CSD18509Q5BT复制
訂購代碼3009659
Channel TypeN Channel
Drain Source Voltage Vds40V
Continuous Drain Current Id100A
Drain Source On State Resistance1000µohm
Transistor Case StyleVSON
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.8V
Power Dissipation195W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (27-Jun-2018)
CSD18509Q5BT 的替代選擇
找到 1 個產品
產品總覽
The CSD18509Q5BT is a NexFET™ N-channel Power MOSFET designed to minimize losses in power conversion applications. It is suitable for use in DC-to-DC conversion, secondary side synchronous rectifier and battery motor control applications.
- Ultra-low ON-resistance
- Low thermal resistance
- Avalanche rated
- Halogen-free
- Plastic package
- Logic level
- -55 to 150°C Operating junction temperature range
應用
Power Management, Motor Drive & Control, Industrial
技術規格
Channel Type
N Channel
Continuous Drain Current Id
100A
Transistor Case Style
VSON
Rds(on) Test Voltage
10V
Power Dissipation
195W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (27-Jun-2018)
Drain Source Voltage Vds
40V
Drain Source On State Resistance
1000µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.8V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Philippines
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Philippines
承擔產品生產最後程序之國家
關稅編號：85423190
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (27-Jun-2018)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.0005