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存貨供應完畢便停止銷售
| 數量 | 價格 |
|---|---|
| 1+ | NT$141.310 |
| 10+ | NT$128.860 |
| 100+ | NT$116.410 |
| 500+ | NT$103.960 |
| 1000+ | NT$91.510 |
價格Each
最少: 1
多項: 1
NT$141.31
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
| 製造商 | TEXAS INSTRUMENTS |
|---|---|
| 製造商產品編號 | CSD19505KCS复制 |
| 製造商標準前置時間 | 54 週 |
| 訂購代碼 | 3009672 |
| Channel Type | N Channel |
| Drain Source Voltage Vds | 80V |
| Continuous Drain Current Id | 150A |
| Drain Source On State Resistance | 2600µohm |
| Transistor Case Style | TO-220 |
| Transistor Mounting | Through Hole |
| Rds(on) Test Voltage | 10V |
| Gate Source Threshold Voltage Max | 2.6V |
| Power Dissipation | 300W |
| No. of Pins | 3Pins |
| Operating Temperature Max | 175°C |
| Product Range | - |
| Qualification | - |
| MSL | - |
產品總覽
The CSD19505KCS is a NexFET™ N-channel Power MOSFET designed to minimize losses in power conversion applications. It is suitable for use in secondary-side synchronous rectifier applications.
- Ultra-low Qg and Qgd
- Low thermal resistance
- Avalanche rated
- Halogen-free
- Plastic package
- -55 to 175°C Operating junction temperature range
應用
Power Management, Motor Drive & Control, Industrial
技術規格
| Channel Type | N Channel |
|---|---|
| Continuous Drain Current Id | 150A |
| Transistor Case Style | TO-220 |
| Rds(on) Test Voltage | 10V |
| Power Dissipation | 300W |
| Operating Temperature Max | 175°C |
| Qualification | - |
| Drain Source Voltage Vds | 80V |
|---|---|
| Drain Source On State Resistance | 2600µohm |
| Transistor Mounting | Through Hole |
| Gate Source Threshold Voltage Max | 2.6V |
| No. of Pins | 3Pins |
| Product Range | - |
| MSL | - |
技術文件 (1)
法規與環境保護
| 原產地: 承擔產品生產最後程序之國家原產地: | China 承擔產品生產最後程序之國家 |
|---|---|
| 關稅編號: | 85412900 |
| US ECCN: | EAR99 |
| EU ECCN: | NLR |
| 符合 RoHS 規定: | 是 RoHS |
| 符合 RoHS 鄰苯二甲酸酯類規定: | 是 RoHS |
| 下載產品合規憑證 | 產品合規憑證 |
| 重量 (公斤): | .003652 |

