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CSD19534KCS
Power MOSFET, N Channel, 100 V, 100 A, 0.0137 ohm, TO-220AB, Through Hole
690 有存貨
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32 件可于 1-2 個工作日後配送(新加坡 件庫存)
658 件可于 3-4 個工作日後配送(英國 件庫存)
存貨供應完畢便停止銷售
| 數量 | 價格 |
|---|---|
| 1+ | NT$62.490 |
| 10+ | NT$57.200 |
| 100+ | NT$51.910 |
| 500+ | NT$46.620 |
| 1000+ | NT$43.500 |
價格Each
最少: 1
多項: 1
NT$62.49
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商產品編號CSD19534KCS
訂購代碼3009676
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id100A
Drain Source On State Resistance0.0137ohm
Transistor Case StyleTO-220AB
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.8V
Power Dissipation118W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (27-Jun-2018)
產品總覽
The CSD19534KCS is a NexFET™ N-channel Power MOSFET designed to minimize losses in power conversion applications. It is suitable for use in secondary-side synchronous rectifier applications.
- Ultra-low Qg and Qgd
- Low thermal resistance
- Avalanche rated
- Halogen-free
- Plastic package
- -55 to 175°C Operating junction temperature range
應用
Power Management, Motor Drive & Control, Industrial
技術規格
Channel Type
N Channel
Continuous Drain Current Id
100A
Transistor Case Style
TO-220AB
Rds(on) Test Voltage
10V
Power Dissipation
118W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (27-Jun-2018)
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.0137ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
2.8V
No. of Pins
3Pins
Product Range
-
MSL
-
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Philippines
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Philippines
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (27-Jun-2018)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.003447