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CSD25402Q3A
Power MOSFET, P Channel, 20 V, 35 A, 7700 µohm, VSON, Surface Mount
2,621 有存貨
10,000 即日起您可預購補貨
2,621 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 1+ | NT$49.770 |
| 10+ | NT$23.200 |
| 100+ | NT$20.580 |
| 500+ | NT$16.020 |
| 1000+ | NT$12.910 |
| 5000+ | NT$11.760 |
價格Each (Supplied on Cut Tape)
最少: 1
多項: 1
NT$49.77
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商產品編號CSD25402Q3A复制
製造商標準前置時間34 週
訂購代碼3125070
Channel TypeP Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id35A
Drain Source On State Resistance7700µohm
Transistor Case StyleVSON
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max900mV
Power Dissipation69W
No. of Pins8Pins
Operating Temperature Max125°C
Product Range-
Qualification-
產品總覽
The CSD25402Q3A is a NexFET™ P-channel Power MOSFET designed to minimize losses in power conversion load management applications. It has a 3.3 × 3.3mm package that offers an excellent thermal performance for the size of the device.
- Ultra-low Qg and Qgd
- Low thermal resistance
- Low RDS (ON)
- Halogen-free
- Plastic package
- -55 to 150°C Operating junction temperature range
應用
Power Management, Safety, Industrial
技術規格
Channel Type
P Channel
Continuous Drain Current Id
35A
Transistor Case Style
VSON
Rds(on) Test Voltage
4.5V
Power Dissipation
69W
Operating Temperature Max
125°C
Qualification
-
Drain Source Voltage Vds
20V
Drain Source On State Resistance
7700µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
900mV
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Malaysia
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Malaysia
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000091