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CSD86356Q5DT
Dual MOSFET, N Channel, 25 V, 25 V, 40 A, 40 A, 1800 µohm
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| 數量 | 價格 |
|---|---|
| 1+ | NT$68.260 |
| 10+ | NT$62.700 |
| 100+ | NT$49.510 |
| 500+ | NT$46.580 |
| 1000+ | NT$41.070 |
價格Each (Supplied on Cut Tape)
最少: 1
多項: 1
NT$68.26
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商產品編號CSD86356Q5DT
訂購代碼2885447
Product RangeNexFET Series
Channel TypeN Channel
Drain Source Voltage Vds N Channel25V
Drain Source Voltage Vds P Channel25V
Continuous Drain Current Id N Channel40A
Continuous Drain Current Id P Channel40A
Drain Source On State Resistance N Channel1800µohm
Drain Source On State Resistance P Channel1800µohm
Transistor Case StyleSON
No. of Pins8Pins
Power Dissipation N Channel12W
Power Dissipation P Channel12W
Operating Temperature Max125°C
Product RangeNexFET Series
Qualification-
技術規格
Channel Type
N Channel
Drain Source Voltage Vds P Channel
25V
Continuous Drain Current Id P Channel
40A
Drain Source On State Resistance P Channel
1800µohm
No. of Pins
8Pins
Power Dissipation P Channel
12W
Product Range
NexFET Series
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
25V
Continuous Drain Current Id N Channel
40A
Drain Source On State Resistance N Channel
1800µohm
Transistor Case Style
SON
Power Dissipation N Channel
12W
Operating Temperature Max
125°C
Qualification
-
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：United States
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：United States
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
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產品合規憑證
重量 (公斤)：.0001