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CSD88537NDT
Dual MOSFET, N Channel, 60 V, 60 V, 15 A, 15 A, 0.0125 ohm
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可供訂購
製造商標準交貨時間：22 週
有貨時通知我
| 數量 | 價格 |
|---|---|
| 1+ | NT$86.990 |
| 10+ | NT$42.690 |
| 100+ | NT$33.630 |
| 500+ | NT$32.600 |
| 1000+ | NT$31.570 |
| 5000+ | NT$30.540 |
價格Each (Supplied on Cut Tape)
最少: 1
多項: 1
NT$86.99
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商產品編號CSD88537NDT复制
製造商標準前置時間22 週
訂購代碼
條帶式包裝3125082
條帶式包裝3125082RL
Channel TypeN Channel
Drain Source Voltage Vds N Channel60V
Drain Source Voltage Vds P Channel60V
Continuous Drain Current Id N Channel15A
Continuous Drain Current Id P Channel15A
Drain Source On State Resistance N Channel0.0125ohm
Drain Source On State Resistance P Channel0.0125ohm
Transistor Case StyleSOIC
No. of Pins8Pins
Power Dissipation N Channel2.1W
Power Dissipation P Channel2.1W
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (27-Jun-2018)
產品總覽
The CSD88537NDT is a NexFET™ dual N-channel Power MOSFET designed to serve as a half bridge in low current motor control applications.
- Ultra-low Qg and Qgd
- Avalanche rated
- Halogen-free
應用
Industrial, Motor Drive & Control, Power Management
技術規格
Channel Type
N Channel
Drain Source Voltage Vds P Channel
60V
Continuous Drain Current Id P Channel
15A
Drain Source On State Resistance P Channel
0.0125ohm
No. of Pins
8Pins
Power Dissipation P Channel
2.1W
Product Range
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
60V
Continuous Drain Current Id N Channel
15A
Drain Source On State Resistance N Channel
0.0125ohm
Transistor Case Style
SOIC
Power Dissipation N Channel
2.1W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (27-Jun-2018)
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Philippines
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Philippines
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (27-Jun-2018)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.001