3,000 即日起您可預購補貨
| 數量 | 價格 |
|---|---|
| 1+ | NT$31.540 |
| 10+ | NT$20.770 |
| 100+ | NT$17.190 |
| 500+ | NT$16.490 |
| 1000+ | NT$15.910 |
| 2500+ | NT$15.730 |
| 5000+ | NT$15.720 |
產品訊息
產品總覽
The UCC27511DBVR is a 1-channel High-speed Low-side Gate Driver that can effectively drive MOSFET and IGBT power switches. Using a design that inherently minimizes shoot-through current, UCC27511 is capable of sourcing and sinking high peak-current pulses into capacitive loads offering rail-to-rail drive capability and extremely small propagation delay, typically 13ns. UCC27511 features a dual-input design which offers flexibility of implementing both inverting (IN- pin) and non-inverting (IN+ pin) configuration with the same device. Either IN+ or IN- pin can be used to control the state of the driver output. The unused input pin can be used for enable and disable functions. For safety purpose, internal pull-up and pull-down resistors on the input pins ensure that outputs are held low when input pins are in floating condition. Hence the unused input pin is not left floating and must be properly biased to ensure that driver output is in enabled for normal operation.
- 4A Peak source and 8A peak sink asymmetrical drive
- Strong sink current offers enhanced immunity against miller turn-on
- Fast propagation delays (13ns typical)
- Fast rise and fall times (9ns and 7ns typical)
- Outputs held low during VDD UVLO
- TTL and CMOS compatible input-logic threshold (independent of supply voltage)
- Hysteretic-logic thresholds for high noise immunity
- Dual-input design (choice of an inverting (IN- pin)/non-inverting (IN+ pin) driver configuration)
- Unused input pin can be used for enable or disable function
- Output held low when input pins are floating
- Input pin absolute maximum voltage levels not restricted by VDD pin bias supply voltage
- Green product and no Sb/Br
應用
Power Management, Signal Processing, Alternative Energy, Motor Drive & Control
警告
This device has limited built-in ESD protection, leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.
技術規格
1Channels
Low Side
6Pins
Surface Mount
4A
4.5V
-40°C
-
-
MSL 1 - Unlimited
-
IGBT, MOSFET
SOT-23
Inverting, Non-Inverting
8A
18V
140°C
-
-
No SVHC (27-Jun-2018)
技術文件 (1)
法規與環境保護
承擔產品生產最後程序之國家原產地:Thailand
承擔產品生產最後程序之國家
RoHS
RoHS
產品合規憑證