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2SC5200-O(Q)
Bipolar (BJT) Single Transistor, NPN, 230 V, 15 A, 150 W, TO-3PL, Through Hole
2,161 有存貨
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8 件可于 1-2 個工作日後配送(新加坡 件庫存)
2153 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 1+ | NT$129.380 |
| 10+ | NT$85.090 |
| 100+ | NT$59.920 |
| 500+ | NT$59.140 |
| 1000+ | NT$58.350 |
價格Each
最少: 1
多項: 1
NT$129.38
品項附註
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產品訊息
製造商TOSHIBA
製造商產品編號2SC5200-O(Q)
訂購代碼3870093
其他名稱2SC5200
技術資料表
Transistor PolarityNPN
Collector Emitter Voltage Max230V
Continuous Collector Current15A
Power Dissipation150W
Transistor Case StyleTO-3PL
Transistor MountingThrough Hole
No. of Pins3Pins
Transition Frequency30MHz
DC Current Gain hFE Min55hFE
Operating Temperature Max150°C
Product Range-
Qualification-
產品總覽
2SC5200-O(Q) is a silicon NPN triple diffused type transistor for power amplifier application.
- High breakdown voltage VCEO = 230V (min)
- Complementary to 2SA1943
- Suitable for use in 100W high fidelity audio amplifier’s output stage
- 150W collector power dissipation (Tc=25°C), 200pF (VCB=10V, IE=0, f=1MHz) collector O/P capacitance
- Collector cut-off current is 5μA max (VCB = 230V, IE = 0A, Ta = 25°C)
- Emitter cut-off current is 5μA max (VEB = 5V, IC = 0A, Ta = 25°C)
- Collector-emitter breakdown voltage is 230V min (IC = 50mA, IB = 0A, Ta = 25°C)
- Collector-emitter saturation voltage is 0.4V typ (IC = 8A, IB = 0.8A, Ta = 25°C)
- Transition frequency is 30MHz typ (VCE = 5V, IC = 1A, Ta = 25°C)
- Junction temperature is 150°C
技術規格
Transistor Polarity
NPN
Continuous Collector Current
15A
Transistor Case Style
TO-3PL
No. of Pins
3Pins
DC Current Gain hFE Min
55hFE
Product Range
-
Collector Emitter Voltage Max
230V
Power Dissipation
150W
Transistor Mounting
Through Hole
Transition Frequency
30MHz
Operating Temperature Max
150°C
Qualification
-
技術文件 (1)
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Japan
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Japan
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：Y-Ex
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
下載產品合規憑證
產品合規憑證
重量 (公斤)：.009525