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SSM6N57NU,LF(T
Dual MOSFET, N Channel, 30 V, 30 V, 4 A, 4 A, 0.03 ohm
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| 數量 | 價格 |
|---|---|
| 100+ | NT$7.530 |
| 500+ | NT$6.380 |
| 1000+ | NT$4.850 |
| 5000+ | NT$3.860 |
價格Each (Supplied on Cut Tape)
最少: 100
多項: 5
NT$753.00
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商TOSHIBA
製造商產品編號SSM6N57NU,LF(T
訂購代碼3872306RL
其他名稱SSM6N57NU ,SSM6N57NU,LF
技術資料表
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds N Channel30V
Drain Source Voltage Vds30V
Drain Source Voltage Vds P Channel30V
Continuous Drain Current Id4A
Continuous Drain Current Id N Channel4A
On Resistance Rds(on)0.03ohm
Continuous Drain Current Id P Channel4A
Drain Source On State Resistance N Channel0.03ohm
Transistor MountingSurface Mount
Drain Source On State Resistance P Channel0.03ohm
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max1V
Transistor Case StyleSOT-1118
Power Dissipation Pd1W
No. of Pins6Pins
Power Dissipation N Channel1W
Power Dissipation P Channel1W
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
技術規格
Channel Type
N Channel
Drain Source Voltage Vds N Channel
30V
Drain Source Voltage Vds P Channel
30V
Continuous Drain Current Id N Channel
4A
Continuous Drain Current Id P Channel
4A
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
4.5V
Transistor Case Style
SOT-1118
No. of Pins
6Pins
Power Dissipation P Channel
1W
Product Range
-
Automotive Qualification Standard
-
Transistor Polarity
N Channel
Drain Source Voltage Vds
30V
Continuous Drain Current Id
4A
On Resistance Rds(on)
0.03ohm
Drain Source On State Resistance N Channel
0.03ohm
Drain Source On State Resistance P Channel
0.03ohm
Gate Source Threshold Voltage Max
1V
Power Dissipation Pd
1W
Power Dissipation N Channel
1W
Operating Temperature Max
150°C
Qualification
-
技術文件 (1)
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Thailand
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Thailand
承擔產品生產最後程序之國家
關稅編號：85412100
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000045