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TBD62781AFWG(Z,EHZ is a TBD62781A series BiCD silicon monolithic integrated circuit. A pull-down resistor is built in the output part.
- 8-ch source type DMOS transistor array
- High output voltage is 50V (max, Ta = 25°C), large output current is -500mA (max,per 1 ch, Ta=25°C)
- Input voltage range from 2.0 to 25V (output on, IOUT = -100mA or more, VDS = 2.0V, Ta = -40 to 85°C)
- Output leakage current is 1.0μA (max, VCC = 50V, VIN = 0V, Ta = 85°C)
- Current consumption is 1.5mA (max, output OPEN, VIN = 2.0V, VCC = 50V)
- Turn on delay is 0.4μs (typ, VOUT = 50V, RL = 125ohm, CL = 15pF)
- Turn off delay is 2.0μs (typ, VOUT = 50V, RL = 125ohm, CL = 15pF)
- P-SOP18-0812-1.27-001 package, operating temperature range from -40 to 85°C
附註
Please be careful about thermal conditions during use.
技術規格
Supply Voltage Min
2V
No. of Outputs
8Outputs
Output Current
-500mA
Product Range
-
Supply Voltage Max
50V
Output Voltage
50V
Driver Case Style
PSOP
技術文件 (1)
法規與環境保護
原產地:
承擔產品生產最後程序之國家原產地:China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地:China
承擔產品生產最後程序之國家
關稅編號:85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定:是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
下載產品合規憑證
產品合規憑證
重量 (公斤):.00048