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產品訊息
製造商TOSHIBA
製造商產品編號TBD62785AFWG(Z,EHZ
訂購代碼4178791
其他名稱TBD62785AFWG, TBD62785AFWG(Z
技術資料表
Supply Voltage Min4.5V
Supply Voltage Max50V
No. of Outputs8Outputs
Output Voltage50V
Output Current-500mA
Driver Case StylePSOP
Product Range-
產品總覽
TBD62785AFWG(Z,EHZ is a TBD62785A series BiCD silicon monolithic integrated circuit. It has a clamp diode for switching inductive loads built-in each output.
- 8-ch low active source type DMOS transistor array
- High output voltage is 50V (max, Ta = 25°C), large output current is -500mA (max,per 1 ch, Ta=25°C)
- Input voltage range from 0 to VCC-3.5V (Ta = -40 to 85°C, IOUT = -100mA or more, VDS=2V)
- Clamp diode forward current is 400mA (max, Ta = -40 to 85°C)
- Output leakage current is 1.0μA (max, VCC = 5.5V, VIN = VCC, Ta = 85°C)
- Current consumption is 4.0mA (max, VCC = 5.5V, VIN = 0V, Output OPEN, per 1 ch)
- Clamp diode forward voltage is 2.0V (max, IF = 350mA, Ta = 25°C)
- Turn on delay is 0.2μs (typ, VCC = 5.5V, RL = 16ohm, CL = 15pF)
- Turn off delay is 1.3μs (typ, VCC = 5.5V, RL = 16ohm, CL = 15pF)
- P-SOP18-0812-1.27-001 package, operating temperature range from -40 to 85°C
附註
Please be careful about thermal conditions during use.
技術規格
Supply Voltage Min
4.5V
No. of Outputs
8Outputs
Output Current
-500mA
Product Range
-
Supply Voltage Max
50V
Output Voltage
50V
Driver Case Style
PSOP
技術文件 (1)
法規與環境保護
原產地:
承擔產品生產最後程序之國家原產地:China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地:China
承擔產品生產最後程序之國家
關稅編號:85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定:是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
下載產品合規憑證
產品合規憑證
重量 (公斤):.00048