列印頁面
TTA1943(Q)
Bipolar (BJT) Single Transistor, Audio, PNP, 230 V, 15 A, 150 W, TO-3PL, Through Hole
129 有存貨
需要更多？
129 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 1+ | NT$118.500 |
| 10+ | NT$77.850 |
| 100+ | NT$70.380 |
| 500+ | NT$62.890 |
| 1000+ | NT$55.360 |
價格Each
最少: 1
多項: 1
NT$118.50
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商TOSHIBA
製造商產品編號TTA1943(Q)
訂購代碼1901958
技術資料表
Transistor PolarityPNP
Collector Emitter Voltage Max230V
Continuous Collector Current15A
Power Dissipation150W
Transistor Case StyleTO-3PL
Transistor MountingThrough Hole
No. of Pins3Pins
Transition Frequency30MHz
DC Current Gain hFE Min80hFE
Operating Temperature Max150°C
Product Range-
Qualification-
產品總覽
The TTA1943 from Toshiba is a through hole PNP silicon epitaxial transistor in TO-3 package. This device is commonly used for power amplification.
- Collector to emitter voltage (Vce) is -230V
- Collector current (Ic) is -15A
- Power dissipation (Pd) is 150W
- Collector to emitter saturation voltage of -3V at -8A collector current
- DC current gain (hFE) of 80 at -1A collector current
- Operating junction temperature range from 150°C
應用
Power Management, Consumer Electronics, Portable Devices, Industrial
技術規格
Transistor Polarity
PNP
Continuous Collector Current
15A
Transistor Case Style
TO-3PL
No. of Pins
3Pins
DC Current Gain hFE Min
80hFE
Product Range
-
Collector Emitter Voltage Max
230V
Power Dissipation
150W
Transistor Mounting
Through Hole
Transition Frequency
30MHz
Operating Temperature Max
150°C
Qualification
-
技術文件 (1)
TTA1943(Q) 的替代選擇
找到 1 個產品
相關產品
找到 4 個產品
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Japan
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Japan
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:待通知
下載產品合規憑證
產品合規憑證
重量 (公斤)：.015876