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| 數量 | 價格 |
|---|---|
| 1+ | NT$64.130 |
| 10+ | NT$29.440 |
| 100+ | NT$26.180 |
| 500+ | NT$22.970 |
| 1000+ | NT$18.950 |
| 5000+ | NT$17.570 |
價格Each
最少: 1
多項: 1
NT$64.13
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產品訊息
製造商VISHAY
製造商產品編號IRF510SPBF
訂購代碼8648212
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id5.6A
Drain Source On State Resistance0.54ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation43W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
SVHCLead (25-Jun-2025)
產品總覽
The IRF510SPBF is a third generation N-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The D2PAK is a surface-mount power package capable of accommodating die size up to HEX-4. It provides the highest power capability in any existing surface-mount package. The D2PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2W in a typical surface-mount application.
- Dynamic dV/dt rating
- Repetitive avalanche rated
- -55 to 175°C Operating temperature range
- Ease of paralleling
- Surface-mount
應用
Industrial, Power Management
技術規格
Channel Type
N Channel
Continuous Drain Current Id
5.6A
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
10V
Power Dissipation
43W
Operating Temperature Max
175°C
Qualification
-
SVHC
Lead (25-Jun-2025)
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.54ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
相關產品
找到 3 個產品
法規與環境保護
原產地:
承擔產品生產最後程序之國家原產地:China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地:China
承擔產品生產最後程序之國家
關稅編號:85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定:Y-Ex
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:Lead (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤):.0018