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IRF730PBF
Power MOSFET, N Channel, 400 V, 5.5 A, 1 ohm, TO-220AB, Through Hole
2,846 有存貨
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1846 件可于 3-4 個工作日後配送(英國 件庫存)
1000 件可于 4-5 個工作日後配送(美國 件庫存)
| 數量 | 價格 |
|---|---|
| 1+ | NT$66.450 |
| 10+ | NT$58.200 |
| 100+ | NT$49.940 |
| 500+ | NT$41.690 |
| 1000+ | NT$33.560 |
價格Each
最少: 1
多項: 1
NT$66.45
品項附註
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產品訊息
製造商VISHAY
製造商產品編號IRF730PBF
訂購代碼8648441
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds400V
Continuous Drain Current Id5.5A
Drain Source On State Resistance1ohm
Transistor Case StyleTO-220AB
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation74W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCLead (21-Jan-2025)
產品總覽
The IRF730PBF is a 400V N-channel Power MOSFET, third generation power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. The package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50W.
- Dynamic dV/dt rating
- Repetitive avalanche rated
- 150°C Operating temperature
- Easy to parallel
- Simple drive requirement
應用
Power Management
技術規格
Channel Type
N Channel
Continuous Drain Current Id
5.5A
Transistor Case Style
TO-220AB
Rds(on) Test Voltage
10V
Power Dissipation
74W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (21-Jan-2025)
Drain Source Voltage Vds
400V
Drain Source On State Resistance
1ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
MSL
-
IRF730PBF 的替代選擇
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:Lead (21-Jan-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.005625