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IRF840ALPBF
Power MOSFET, N Channel, 500 V, 8 A, 0.85 ohm, TO-262, Through Hole
105 有存貨
1,000 即日起您可預購補貨
105 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 1+ | NT$125.390 |
| 10+ | NT$64.340 |
| 100+ | NT$56.130 |
| 500+ | NT$48.580 |
| 1000+ | NT$46.950 |
| 5000+ | NT$46.020 |
價格Each
最少: 1
多項: 1
NT$125.39
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商VISHAY
製造商產品編號IRF840ALPBF
訂購代碼1611637
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds500V
Continuous Drain Current Id8A
Drain Source On State Resistance0.85ohm
Transistor Case StyleTO-262
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max-
Power Dissipation3.1W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCLead (25-Jun-2025)
產品總覽
The IRF840ALPBF is a HEXFET® N-channel Power MOSFET offers low gate charge Qg results in simple drive requirement. It is suitable for high speed power switching.
- Improved gate, avalanche and dynamic dV/dt ruggedness
- Fully characterized capacitance, avalanche voltage and current
應用
Power Management
技術規格
Channel Type
N Channel
Continuous Drain Current Id
8A
Transistor Case Style
TO-262
Rds(on) Test Voltage
10V
Power Dissipation
3.1W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (25-Jun-2025)
Drain Source Voltage Vds
500V
Drain Source On State Resistance
0.85ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
-
No. of Pins
3Pins
Product Range
-
MSL
-
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Israel
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Israel
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：Y-Ex
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:Lead (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.002386