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| 數量 | 價格 |
|---|---|
| 1+ | NT$94.830 |
| 10+ | NT$47.100 |
| 100+ | NT$42.520 |
| 500+ | NT$34.350 |
| 1000+ | NT$29.410 |
| 5000+ | NT$28.620 |
價格Each
最少: 1
多項: 1
NT$94.83
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商VISHAY
製造商產品編號IRF9520SPBF
訂購代碼2335245
技術資料表
Channel TypeP Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id6.8A
Drain Source On State Resistance0.6ohm
Transistor Case StyleTO-263AB
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation60W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
SVHCLead (21-Jan-2025)
產品總覽
The IRF9520SPBF is a third generation P-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The D2PAK is a surface-mount power package capable of accommodating die size up to HEX-4. It provides the highest power capability in any existing surface-mount package. The D2PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2W in a typical surface-mount application.
- Dynamic dV/dt rating
- Repetitive avalanche rated
- -55 to 175°C Operating temperature range
- Surface-mount
- Halogen-free
應用
Industrial, Power Management
技術規格
Channel Type
P Channel
Continuous Drain Current Id
6.8A
Transistor Case Style
TO-263AB
Rds(on) Test Voltage
10V
Power Dissipation
60W
Operating Temperature Max
175°C
Qualification
-
SVHC
Lead (21-Jan-2025)
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.6ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
法規與環境保護
原產地:
承擔產品生產最後程序之國家原產地:China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地:China
承擔產品生產最後程序之國家
關稅編號:85412100
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定:是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:Lead (21-Jan-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤):.002493