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IRFBE30PBF
MOSFET, N, 800V, 4.1A, TO-220
1,277 有存貨
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65 件可于 1-2 個工作日後配送(新加坡 件庫存)
1212 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 1+ | NT$69.280 |
| 10+ | NT$48.110 |
| 100+ | NT$41.700 |
| 500+ | NT$38.490 |
| 1000+ | NT$30.190 |
| 5000+ | NT$29.590 |
價格Each
最少: 1
多項: 1
NT$69.28
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商VISHAY
製造商產品編號IRFBE30PBF
訂購代碼8648859
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds800V
Continuous Drain Current Id4.1A
Drain Source On State Resistance3ohm
Transistor Case StyleTO-220AB
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation125W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCLead (21-Jan-2025)
產品總覽
The IRFBE30PBF is a 800V N-channel Power MOSFET, third generation HEXFET® power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. The package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50W.
- Dynamic dV/dt rating
- Repetitive avalanche rated
- 150°C Operating temperature
- Easy to parallel
- Simple drive requirement
應用
Power Management
技術規格
Channel Type
N Channel
Continuous Drain Current Id
4.1A
Transistor Case Style
TO-220AB
Rds(on) Test Voltage
10V
Power Dissipation
125W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (21-Jan-2025)
Drain Source Voltage Vds
800V
Drain Source On State Resistance
3ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
MSL
-
相關產品
找到 3 個產品
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:Lead (21-Jan-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.002