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IRFD9120PBF
Power MOSFET, P Channel, 100 V, 1 A, 0.6 ohm, DIP, Through Hole
可供訂購
製造商標準交貨時間：17 週
有貨時通知我
| 數量 | 價格 |
|---|---|
| 1+ | NT$41.030 |
| 10+ | NT$29.570 |
| 100+ | NT$23.370 |
| 500+ | NT$19.240 |
| 1000+ | NT$17.010 |
| 5000+ | NT$15.900 |
價格Each
最少: 1
多項: 1
NT$41.03
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商VISHAY
製造商產品編號IRFD9120PBF
訂購代碼9103244
技術資料表
Channel TypeP Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id1A
Drain Source On State Resistance0.6ohm
Transistor Case StyleDIP
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation1.3W
No. of Pins4Pins
Operating Temperature Max175°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (21-Jan-2025)
產品總覽
The IRFD9120PBF is a -100V P-channel Power MOSFET, third generation HEXFET® power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. The package is a machine-insertable case style which can be stacked in multiple combinations on standard 0.1-inch pin centres. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1W.
- Dynamic dV/dt rating
- Repetitive avalanche rated
- 175°C Operating temperature
- Easy to parallel
- Simple drive requirement
- For automatic insertion
- End stackable
應用
Power Management
技術規格
Channel Type
P Channel
Continuous Drain Current Id
1A
Transistor Case Style
DIP
Rds(on) Test Voltage
10V
Power Dissipation
1.3W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.6ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4V
No. of Pins
4Pins
Product Range
-
MSL
-
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Philippines
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Philippines
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (21-Jan-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000572