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| 數量 | 價格 |
|---|---|
| 1+ | NT$131.290 |
| 10+ | NT$68.610 |
| 100+ | NT$58.760 |
| 500+ | NT$51.210 |
| 1000+ | NT$46.950 |
| 5000+ | NT$46.020 |
產品訊息
產品總覽
The IRFIBE30GPBF is a 800V N-channel enhancement-mode Power MOSFET with single configuration. This third generation Power MOSFET from Vishay provides the designer with the best combination of fast switching, ruggedized device design, low ON-resistance. The FULLPAK eliminates the need for additional insulating hardware in applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heat sink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heat sink using a single clip or by a single screw fixing.
- Isolated package
- Low thermal resistance
- Sink to lead creepage
- High voltage isolation
- Dynamic dV/dt rating
應用
Industrial, Power Management
技術規格
N Channel
2.1A
TO-220FP
10V
35W
150°C
-
Lead (04-Feb-2026)
800V
3ohm
Through Hole
4V
3Pins
-
-
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法規與環境保護
承擔產品生產最後程序之國家原產地:Israel
承擔產品生產最後程序之國家
RoHS
RoHS
產品合規憑證

