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IRFP150PBF
Power MOSFET, N Channel, 100 V, 41 A, 0.055 ohm, TO-247AC, Through Hole
803 有存貨
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353 件可于 3-4 個工作日後配送(英國 件庫存)
450 件可于 4-5 個工作日後配送(美國 件庫存)
| 數量 | 價格 |
|---|---|
| 1+ | NT$114.050 |
| 10+ | NT$80.910 |
| 100+ | NT$73.280 |
| 500+ | NT$65.640 |
| 1000+ | NT$63.040 |
價格Each
最少: 1
多項: 1
NT$114.05
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商VISHAY
製造商產品編號IRFP150PBF
訂購代碼1611457
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id41A
Drain Source On State Resistance0.055ohm
Transistor Case StyleTO-247AC
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2V
Power Dissipation230W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
MSL-
SVHCLead (21-Jan-2025)
產品總覽
The IRFP150PBF is a HEXFET® third generation N-channel Power MOSFET provide the designer with the best combination of fast switching, ruggedized device design and low ON-resistance. The package provides greater creepage distances between pins to meet the requirements of most safety specifications.
- Dynamic dV/dt rating
- Repetitive avalanche rating
- Isolated central mounting hole
- Fast switching
- Ease of paralleling
- Simple drive requirements
應用
Commercial, Industrial, Power Management
技術規格
Channel Type
N Channel
Continuous Drain Current Id
41A
Transistor Case Style
TO-247AC
Rds(on) Test Voltage
10V
Power Dissipation
230W
Operating Temperature Max
175°C
Qualification
-
SVHC
Lead (21-Jan-2025)
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.055ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
2V
No. of Pins
3Pins
Product Range
-
MSL
-
相關產品
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:Lead (21-Jan-2025)
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產品合規憑證
重量 (公斤)：.004536