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IRFPC60PBF
Power MOSFET, N Channel, 600 V, 16 A, 0.4 ohm, TO-247AC, Through Hole
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162 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 1+ | NT$269.260 |
| 10+ | NT$162.270 |
| 100+ | NT$143.730 |
| 500+ | NT$134.810 |
| 1000+ | NT$125.550 |
價格Each
最少: 1
多項: 1
NT$269.26
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商VISHAY
製造商產品編號IRFPC60PBF
訂購代碼2646356
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds600V
Continuous Drain Current Id16A
Drain Source On State Resistance0.4ohm
Transistor Case StyleTO-247AC
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation280W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCLead (21-Jan-2025)
產品總覽
The IRFPC60PBF is a 600V N-channel enhancement-mode Power MOSFET with single configuration. This third generation Power MOSFET from Vishay provides the designer with the best combination of fast switching, ruggedized device design, low ON-resistance. It also provides greater creepage distance between pins to meet the requirements of most safety specifications.
- Dynamic dV/dt rating
- Repetitive avalanche rated
- Fast switching
- Ease of paralleling
- Simple drive requirements
- Isolated central mounting hole
應用
Industrial, Power Management
技術規格
Channel Type
N Channel
Continuous Drain Current Id
16A
Transistor Case Style
TO-247AC
Rds(on) Test Voltage
10V
Power Dissipation
280W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (21-Jan-2025)
Drain Source Voltage Vds
600V
Drain Source On State Resistance
0.4ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Israel
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Israel
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:Lead (21-Jan-2025)
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產品合規憑證
重量 (公斤)：.00567