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SI1029X-T1-E3
Dual MOSFET, Complementary N and P Channel, 60 V, 60 V, 500 mA, 500 mA, 1.4 ohm
產品訊息
製造商VISHAY
製造商產品編號SI1029X-T1-E3
訂購代碼1470092RL
技術資料表
Transistor PolarityComplementary N and P Channel
Channel TypeComplementary N and P Channel
Drain Source Voltage Vds60V
Drain Source Voltage Vds N Channel60V
Drain Source Voltage Vds P Channel60V
Continuous Drain Current Id500mA
On Resistance Rds(on)1.4ohm
Continuous Drain Current Id N Channel500mA
Continuous Drain Current Id P Channel500mA
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Transistor Case StyleSC-89
Gate Source Threshold Voltage Max2.5V
Power Dissipation Pd250mW
No. of Pins6Pins
Power Dissipation N Channel250mW
Power Dissipation P Channel250mW
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
SI1029X-T1-E3 的替代選擇
找到 2 個產品
技術規格
Transistor Polarity
Complementary N and P Channel
Drain Source Voltage Vds
60V
Drain Source Voltage Vds P Channel
60V
On Resistance Rds(on)
1.4ohm
Continuous Drain Current Id P Channel
500mA
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
2.5V
No. of Pins
6Pins
Power Dissipation P Channel
250mW
Product Range
-
Automotive Qualification Standard
-
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds N Channel
60V
Continuous Drain Current Id
500mA
Continuous Drain Current Id N Channel
500mA
Transistor Mounting
Surface Mount
Transistor Case Style
SC-89
Power Dissipation Pd
250mW
Power Dissipation N Channel
250mW
Operating Temperature Max
150°C
Qualification
-
技術文件 (1)
相關產品
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Philippines
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Philippines
承擔產品生產最後程序之國家
關稅編號：85411000
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:待通知
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產品合規憑證
重量 (公斤)：.0001